PECVD by microwave or radio frequency make gas ionization containing film the constituent atoms, in a local plasma formation, and plasma chemical activity is very strong, is easy to react, sedimentary out the desired film on substrate, it widely used product high quality sio2 film,si3N4 film, diamond film, hard thin film, optical thin film and CNT etc.
| Model | OPT-T1200-P | OPT-T1400-P | OPT-T170O-P |
|---|---|---|---|
| Max. temperature | 1200° C | 1400° C | 1700° C |
| Work temperature | 1100° C | 1300° C | 1600° C |
| Heating rate | 0-20° | 0-20° | 0-15° |
| Heating element | Resistance wire with Mo | SiC heating elements | MoSi2 heating elements |
| Thermal couple | K type | S type | B type |
| Fiber Liner | 1430 alumina fiber | 1600 alumina fiber | 1800 alumina fiber |
| Temperature rise rate | 0-20°/min | ||
| Temperature accuracy | ±1℃ | ||
| Temperature uniformity | ±5℃ | ||
| Rated Power | 110-415V，50/60Hz | ||
| Plasma Power | 200/300/500/1000W | ||
| Gas Control | Float flow meter/Mass flow meter | ||
| Vacuum Unit | Rotary vane/Diffusion/Turbo molecular pump | ||
