It is used for surface Treatment, which consist of RF generator, flexible gas delivery pipe and plasma beam head. The plasma jet flow can activate and clean material surface rapidly at low temperature without vacuum, such as single crystal wafer, optical component, plastics etc. It is excellent for treat wafer surface before epitaxial or optical coating to obtain higher quality thin film. This device also may be used for studying Atomospheric pressure CVD.
| Dimension | 380x280x280mm LXWXH |
|---|---|
| Rated power | 1000VA (Adjustable) |
| Power | 220V (±15%) |
| Plasma Beam head | One Plasma Beam with two heads round head：10-12mm retangular head：15-18mm |
| Frequency | 18-25kHz |
| Input Gas Pressure and Working Gases |
2-2.5kg 0.12m3/min Air, N2, Ar, He or any mixed gas ( no flammable and explosive gases) |
| Working Environment | Temperature: -10℃~+50℃ Relative humidity:20%> 93%< No flammable gas |
| Weight | 28kg |
